CoolGaN™ Transistor 100 V G1 in PQFN 3x3, 11 mΩ

• AEC-Q101 qualified\n• 100 V e-mode power transistor\n• Dual-side cooled package\n• No reverse recovery charge\n• Ultra-low figures of merit\n\n优势:\n• Best-in-class power density\n• Highest efficiency\n• Improved thermal management\n• Enabling smaller and lighter designs\n• Excellent reliability\n•;

Infineon

英飞凌

CoolGaNTM Transistor 100 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

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Infineon

英飞凌

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TO-263

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IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

INFINEON/英飞凌
IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司