3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)

DESCRIPTION: The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-he-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：19.28 Kbytes 页数：9 Pages

IDT

3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)

DESCRIPTION: The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-he-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：19.28 Kbytes 页数：9 Pages

IDT

3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)

DESCRIPTION: The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-he-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：19.28 Kbytes 页数：9 Pages

IDT

3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)

DESCRIPTION: The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-he-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：19.28 Kbytes 页数：9 Pages

IDT

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 44TSOP II

Renesas Electronics America Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 44TSOP II

Renesas Electronics America Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 44TSOP II

Renesas Electronics America Inc