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IDT71V416YS15BEGI

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416YS15BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416YS15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416YS15PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416YS15YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416YS15YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT71V416YS15BEGI

  • 功能描述:

    IC SRAM 4MBIT 15NS 48BGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 异步

  • 存储容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并联

  • 电源电压:

    2.2 V ~ 3.6 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    48-VFBGA

  • 供应商设备封装:

    48-VFBGA(6x8)

  • 包装:

    带卷(TR)

供应商型号品牌批号封装库存备注价格
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
23+
48BGA
5281
原装现货
询价
IDT
23+
44PINTSOPTYP
9526
询价
IDT
22+
SOP
2960
诚信交易大量库存现货
询价
IDT
20+
SOP
2960
诚信交易大量库存现货
询价
IDT
23+
44-TSOPII
39257
专业分销产品!原装正品!价格优势!
询价
IDT
22+
44TSOP II
9000
原厂渠道,现货配单
询价
IDT
21+
44TSOP II
13880
公司只售原装,支持实单
询价
IDT
23+
44TSOP II
9000
原装正品,支持实单
询价
idt
dc0721
原厂封装
442
INSTOCK:26/tube/tssop
询价
更多IDT71V416YS15BEGI供应商 更新时间2024-5-24 9:02:00