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70V631S10BC

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

70V631S10BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

70V631S10BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BCGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BCGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BF

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

70V631S10BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

70V631S10BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

70V631S10PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

70V631S10PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT70V631S10BC

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT70V631S10BCI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT70V631S10BF

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

详细参数

  • 型号:

    IDT70V631S10PRFG

  • 功能描述:

    IC SRAM 4MBIT 10NS 128TQFP

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    3,000

  • 系列:

    - 格式 -

  • 存储器:

    EEPROMs - 串行

  • 存储器类型:

    EEPROM

  • 存储容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 线串口

  • 电源电压:

    1.7 V ~ 5.5 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装:

    8-SOIC

  • 包装:

    带卷(TR)

供应商型号品牌批号封装库存备注价格
IDT
23+
128-TQFP(14x20)
1389
专业分销产品!原装正品!价格优势!
询价
IDT
22+
128TQFP (14x20)
9000
原厂渠道,现货配单
询价
IDT
21+
128TQFP (14x20)
13880
公司只售原装,支持实单
询价
IDT
23+
128TQFP (14x20)
9000
原装正品,支持实单
询价
IDT
2147+
原厂封装
12500
原厂原装现货,订货价格优势,终端BOM表可配单提供样
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
23+
256BGA
4492
原装现货
询价
IDT
23+
QFP
20000
原厂原装正品现货
询价
IDT
2023+
QFP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IDT
0935+
QFP
1
就找我吧!--邀您体验愉快问购元件!
询价
更多IDT70V631S10PRFG供应商 更新时间2024-4-27 16:30:00