IDH06G65C5中文资料采用 real2pin 封装的 650 V 碳化硅肖特基二极管数据手册Infineon规格书

描述 Description

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). 

特性 Features

• V br at 650V
• Improved figure of merit (Q c x V f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T j max 175°C)
• Improved surge capability
• Pb-free lead plating

优势:
• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

应用 Application

• Telecom/server SMPS
• Solar
• UPS
• PC power
• LED/LCD TV
• Motor drives
• HID lighting

简介

IDH06G65C5属于分立半导体产品的二极管-整流器-单。由制造生产的IDH06G65C5二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。