ICS9120/M数据手册贸易商英飞凌SUTEX第6页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFR9120TRLPBFA	文件：4.40688 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120TRLPBFA	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9120TRPBF	文件：4.28393 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120TRPBF	文件：1.89003 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9120TRPBFA	文件：4.40688 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120TRPBFA	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9120TRRPBF	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFRU9120N	文件：1.92601 Mbytes Page：10 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFRU9120N	文件：1.92601 Mbytes Page：10 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFRU9120N	文件：117.52 Kbytes Page：10 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.6A)	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU9120	文件：73.44 Kbytes Page：7 Pages	5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRFU9120	文件：173.05 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A) DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9120) •StraightLead	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU9120	文件：1.89003 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFU9120	文件：4.40685 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9120	文件：4.40688 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9120	文件：345.69 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFU9120	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9120,SiHFR9120) •Straightlead(IRFU9120,SiHFU9120) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFU9120	文件：4.04661 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9120N	文件：1.94065 Mbytes Page：10 Pages	UltraLowOn-Resistance Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications.	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9120N	文件：117.52 Kbytes Page：10 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.6A)	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	ICS9120/M		05+	原厂原装	5801	只做全新原装真实现货供应	询价
深圳市佳鑫美电子科技有限公司	ICS9120/M		22+	SMD	3200	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市博浩通科技有限公司	ICS9120-08	ICS	23+	SMD	8890	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
齐创科技(上海,北京,青岛)有限公司	ICS9120-08	ICS	23+	SMT-86	5000	原装正品,假一罚十	询价
深圳市永贝尔科技有限公司	ICS9120-08	ICST	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
瀚佳科技(深圳)有限公司	ICS9120-08	INTEGRATEDCIRCUITSYSTEMS	21+		35200	一级代理/放心采购	询价
深圳庞田科技有限公司	ICS9120-08	ICS	2023+环保现货	SOP-8	2500	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市诺美思科技有限公司	ICS9120-08	ICS	22+/23+	SMD	9800	原装进口公司现货假一赔百	询价
深圳市赛尔通科技有限公司	ICS912008C08T	ICS	23+	SOIC	65480		询价
深圳市一线半导体有限公司	ICS9120-08CS	ICS	00+	SOP8	2470		询价

更多ICS9120/M供应商更新时间2024-6-15 10:48:00

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