IRFM360

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFM360

SimpleDriveRequirements

IRFM360

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFP360

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

IRFP360

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRFP360

PowerMOSFET

IRFP360

MegaMOSFET

Features •Fastswitchingtimes •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutingdv/dtrating Applications •DCchoppers •MotorControls •Switch-modeandresonant-mode •Uninterruptablepowersupplies(UPS) Adva

IRFP360

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=23A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) •FastSwitching DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

IRFP360

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

IRFP360

PowerMOSFET