Superjunction MOSFET Gen1

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IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power S

文件：435.11 Kbytes 页数：15 Pages

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IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：703.05 Kbytes 页数：13 Pages

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600V low loss switching series third generation

文件：2.48742 Mbytes 页数：16 Pages

Infineon

英飞凌