256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

文件：88.24 Kbytes 页数：9 Pages

ICSI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

文件：88.24 Kbytes 页数：9 Pages

ICSI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

文件：88.24 Kbytes 页数：9 Pages

ICSI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

文件：88.24 Kbytes 页数：9 Pages

ICSI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

文件：88.24 Kbytes 页数：9 Pages

ICSI