256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor

文件：126.22 Kbytes 页数：11 Pages

ICSI