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IC62LV256

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100J

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100JI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100N

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100T

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100TI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100U

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV256-100UI

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION TheICSIIC62LV256isalowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOSdouble-metaltechnology. FEATURES •Accesstime:45,70,100ns •Lowactivepower:70mW •Lowstandbypower —60µWCMOSstandby •Fullystaticoperation

ICSI

矽成

IC62LV25616L

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-100B

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-100BI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-100T

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-100TI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-55B

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-55BI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-55T

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-55TI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-70B

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-70BI

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

IC62LV25616L-70T

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION TheICSIIC62LV25616LandIC62LV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ICSI

矽成

详细参数

  • 型号:

    IC62LV256

  • 制造商:

    ICSI

  • 制造商全称:

    Integrated Circuit Solution Inc

  • 功能描述:

    256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

供应商型号品牌批号封装库存备注价格
ICSI
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ICSI
2022
TSOP
5280
原厂原装正品,价格超越代理
询价
ICSI
1408+
TSOP
12000
绝对原装进口现货可开增值税发票
询价
ICSI
03+
sop
169
询价
ICSI
23+
SOP/DIP
5000
原装正品,假一罚十
询价
TI
2020+
TI
13
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ICSI
23+
TSOP
18000
询价
ICSI
2339+
TSOP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ICSI
16+
BGA
1122
全新原装现货
询价
ICSI
2016+
TSOP44
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多IC62LV256供应商 更新时间2024-6-2 9:00:00