丝印：I730；Package：TO-262；6A 400V N-channel Enhancement Mode Power MOSFET

文件：1.76217 Mbytes 页数：12 Pages

WXDH

东海半导体

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：223.63 Kbytes 页数：8 Pages

IRF

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

文件：94.17 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

文件：59.69 Kbytes 页数：7 Pages

PHI

PHI