丝印：I1；Package：X2QFN；TUSB211 USB 2.0 High Speed Signal Conditioner

1 Features 1• Compatible with USB 2.0, OTG 2.0 and BC 1.2 • Support for LS, FS, HS signaling • Active Power Consumption of 55 mW (Typical) with 3.3-V Single Supply • Selectable Signal Gain Via External Pulldown Resistor • Does Not Break DP, DM Trace • Scalable Solution – Daisy Chain Device

文件：595.72 Kbytes 页数：20 Pages

TI

德州仪器

丝印：I1；Package：X2QFN；TUSB211 USB 2.0 High Speed Signal Conditioner

1 Features 1• Compatible with USB 2.0, OTG 2.0 and BC 1.2 • Support for LS, FS, HS signaling • Active Power Consumption of 55 mW (Typical) with 3.3-V Single Supply • Selectable Signal Gain Via External Pulldown Resistor • Does Not Break DP, DM Trace • Scalable Solution – Daisy Chain Device

文件：595.72 Kbytes 页数：20 Pages

TI

德州仪器

丝印：I11NM80；Package：I2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

文件：908.99 Kbytes 页数：22 Pages

STMICROELECTRONICS

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丝印：I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes 页数：11 Pages

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丝印：I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：964.56 Kbytes 页数：11 Pages

WXDH

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丝印：I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：963.95 Kbytes 页数：11 Pages

WXDH

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丝印：I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：964.93 Kbytes 页数：11 Pages

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丝印：I10N65；Package：TO-262；10A 650V N-channel Enhancement Mode Power MOSFET

文件：1.0784 Mbytes 页数：10 Pages

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东海半导体

丝印：I10N65；Package：TO-262；10A 650V N-channel Enhancement Mode Power MOSFET

文件：1.07919 Mbytes 页数：10 Pages

WXDH

东海半导体

丝印：I10N65；Package：TO-262；10A 650V N-channel Enhancement Mode Power MOSFET

文件：1.07913 Mbytes 页数：10 Pages

WXDH

东海半导体