IRFM150

REPETITIVEAVALANCHERATEDANDdv/dtRATED

REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFETTRNANSISTOR 100Volt,0.07OhmHEXFET

IRFM150

N-CHANNELPOWERMOSFET

IRFM150

SimpleDriveRequirements

IRFN150

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.060ohm,Id=34A)

RDS(on)0.07Ω ID34A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis

IRFN150

SimpleDriveRequirements

IRFN150SMD

N-CHANNELPOWERMOSFET

IRFP150

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032Ω(Typ.)

IRFP150

PowerMOSFET(Vdss=100V,Rds(on)=0.035W,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFP150

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRFP150

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude