4M x 16-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

文件：216.21 Kbytes 页数：26 Pages

SIEMENS

西门子

4M x 16-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

文件：216.21 Kbytes 页数：26 Pages

SIEMENS

西门子

4M x 16-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

文件：216.21 Kbytes 页数：26 Pages

SIEMENS

西门子

4M x 16-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

文件：216.21 Kbytes 页数：26 Pages

SIEMENS

西门子

4M x 16-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

文件：216.21 Kbytes 页数：26 Pages

SIEMENS

西门子

4M x 16-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

文件：216.21 Kbytes 页数：26 Pages

SIEMENS

西门子

4M x 16-Bit Dynamic RAM

Infineon

英飞凌