8M x 8-Bit Dynamic RAM

This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. Advance

文件：327.54 Kbytes 页数：29 Pages

SIEMENS

西门子

8M x 8-Bit Dynamic RAM

This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. Advance

文件：327.54 Kbytes 页数：29 Pages

SIEMENS

西门子

8M x 8-Bit Dynamic RAM

This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. Advance

文件：327.54 Kbytes 页数：29 Pages

SIEMENS

西门子

8M x 8-Bit Dynamic RAM

This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. Advance

文件：327.54 Kbytes 页数：29 Pages

SIEMENS

西门子

8M x 8-Bit Dynamic RAM

Infineon

英飞凌

8M x 8-Bit Dynamic RAM

Infineon

英飞凌