16M x 4-Bit Dynamic RAM

This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405B op

文件：303.46 Kbytes 页数：29 Pages

SIEMENS

西门子

16M x 4-Bit Dynamic RAM

This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405B op

文件：303.46 Kbytes 页数：29 Pages

SIEMENS

西门子

16M x 4-Bit Dynamic RAM

This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405B op

文件：303.46 Kbytes 页数：29 Pages

SIEMENS

西门子

16M x 4-Bit Dynamic RAM

This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405B op

文件：303.46 Kbytes 页数：29 Pages

SIEMENS

西门子

16M x 4-Bit Dynamic RAM

Infineon

英飞凌