HY6N60FT数据手册行情报价虹扬科技HY-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HY6N60FT	文件：111.84 Kbytes Page：4 Pages	600V / 6.0A N-Channel Enhancement Mode MOSFET 文件：111.84 Kbytes 页数：4 Pages	HY 虹扬科技	HY
HY6N60FT	文件：300 bytes Page：1 Pages	600V / 6.0A N-Channel Enhancement Mode MOSFET	HY 虹扬科技	HY
HY6N60T	文件：111.84 Kbytes Page：4 Pages	600V / 6.0A N-Channel Enhancement Mode MOSFET 文件：111.84 Kbytes 页数：4 Pages	HY 虹扬科技	HY
IRF6N60	文件：158.62 Kbytes Page：5 Pages	POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff 文件：158.62 Kbytes 页数：5 Pages	SUNTAC	SUNTAC
IRF6N60FP	文件：158.62 Kbytes Page：5 Pages	POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff 文件：158.62 Kbytes 页数：5 Pages	SUNTAC	SUNTAC

更多HY6N60FT供应商更新时间2025-12-24 11:06:00