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HY6N60T

600V / 6.0A N-Channel Enhancement Mode MOSFET

文件:111.84 Kbytes 页数:4 Pages

HY

虹扬科技

IRF6N60

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

文件:158.62 Kbytes 页数:5 Pages

SUNTAC

IRF6N60FP

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

文件:158.62 Kbytes 页数:5 Pages

SUNTAC

IRFIB6N60A

Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)

Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS† Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characteri

文件:149.09 Kbytes 页数:8 Pages

IRF

详细参数

  • 型号:

    HY6N60T

  • 制造商:

    HY

  • 制造商全称:

    HY ELECTRONIC CORP.

  • 功能描述:

    600V/6.0A N-Channel Enhancement Mode MOSFET

供应商型号品牌批号封装库存备注价格
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
HUAYING
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
HY
24+
DIP
8766
询价
HY
20+
DIP
88720
红外全新原装主营-可开原型号增税票
询价
HongKong
23+
接近反射式
39276
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
AF
23+
SOT-23
122212
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HanElectricity(瀚源)
23+
-
2445
原装现货/专做开关15年
询价
HOOYI
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
HOOYI
23+
TO-251
6800
专注配单,只做原装进口现货
询价
25+23+
SMD
47874
绝对原装正品现货,全新深圳原装进口现货
询价
更多HY6N60T供应商 更新时间2025-10-4 11:06:00