HY57V561620CTP中文资料4 Banks x 4M x 16Bit Synchronous DRAM数据手册SK hynix规格书

描述 Description

DESCRIPTION
The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.
HY57V561620C(L)T(P) Series is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)FEATURES
• Single 3.3±0.3V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
   pitch (Leaded Package or Lead Free Package)
• All inputs and outputs referenced to positive edge of system
   clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 8192 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
   - 1, 2, 4, 8 or Full page for Sequential Burst
   - 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency ; 2, 3 Clocks

特性 Features

• Single 3.3±0.3V power supply
• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
• All inputs and outputs referenced to positive edge of system
• Data mask function by UDQM, LDQM
• Auto refresh and self refresh
• Programmable Burst Length and Burst Type
• Programmable CAS Latency ; 2, 3 Clocks