4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION\nThe HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.\nHY57V561620C(L)T(P) Series is offering ful • Single 3.3±0.3V power supply\n• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin\n• All inputs and outputs referenced to positive edge of system\n• Data mask function by UDQM, LDQM\n• Auto refresh and self refresh\n• Programmable Burst Length and Burst Type\n• Programmable CAS Latency ; 2, 3 ;

SK hynix

海力士