4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

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4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件：217.72 Kbytes 页数：12 Pages

Hynix

海力士

4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po

文件：151.77 Kbytes 页数：13 Pages

Hynix

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