首页 >HY57V641620ET>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HY57V641620ET | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix | ||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | Hynix |
详细参数
- 型号:
HY57V641620ET
- 制造商:
HYNIX
- 制造商全称:
Hynix Semiconductor
- 功能描述:
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
SSOP |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
23+ |
SSOP |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
HYNIX |
06+ |
TSOP |
5503 |
现货-ROHO |
询价 | ||
HY |
06+ |
TSOP |
1000 |
自己公司全新库存绝对有货 |
询价 | ||
HY |
2022 |
TSSOP |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
HYNIX |
15+ |
TSSOP |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
HY |
23+ |
标准封装 |
18000 |
询价 | |||
HYDAI |
2339+ |
TSOP |
5645 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
HYNIX |
2015+ |
TSOP-54 |
19898 |
专业代理原装现货,特价热卖! |
询价 | ||
HYNIX |
23+ |
TSOP54 |
7750 |
全新原装优势 |
询价 |
相关规格书
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相关库存
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