首页 >HY57V161610E>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operati 文件：215.67 Kbytes 页数：13 Pages | HYNIX 海力士 | HYNIX | ||
HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM | SK hynix 海力士 | SK hynix | |
SDRAM - 16Mb | SK hynix 海力士 | SK hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM | SK hynix 海力士 | SK hynix |
详细参数
- 型号：
HY57V161610E
- 制造商：
HYNIX
- 制造商全称：
Hynix Semiconductor
- 功能描述：
2 Banks x 512K x 16 Bit Synchronous DRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
18+ |
TSOP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Hynix |
23+ |
500 |
全新原装真实库存,一周 |
询价 | |||
HY |
06+ |
TSOP |
1000 |
全新原装 绝对有货 |
询价 | ||
HYNIX |
1215+ |
TSOP |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 | ||
HYNIX |
17+ |
TSOP |
6200 |
100%原装正品现货 |
询价 | ||
HYNIX |
24+/25+ |
2880 |
原装正品现货库存价优 |
询价 | |||
HYNIX |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
询价 | ||
1018+ |
13 |
全新原装现货 |
询价 | ||||
HY |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
HYNIX |
25+ |
TSOP50P |
339 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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相关库存
更多- HY57V161610ET-10I
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- HY57V168010ATC-15
- HY57V168010DTC-10P
- HY57V168010DTC-8
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- HY57V281620ALT-H
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- HY57V281620AT-SI
- HY57V281620BT
- HY57V281620ELT-5
- HY57V281620ELT-7
- HY57V281620ELTP-5
- HY57V281620ELTP-7
- HY57V281620ET
- HY57V281620ET-6
- HY57V281620ET-H
- HY57V281620ETP-6
- HY57V281620ETP-H
- HY57V281620HCLT-5
- HY57V281620HCLT-6I
