HY57V161610ET-7I中文资料海力士数据手册PDF规格书

DESCRIPTION

THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.

FEATURES

• Single 3.0V to 3.6V power supply

• All device pins are compatible with LVTTL interface

• JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin

pitch

• All inputs and outputs referenced to positive edge of system

clock

• Data mask function by UDQM/LDQM

• Internal two banks operation

• Auto refresh and self refresh

• 4096 refresh cycles / 64ms

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 and Full Page for Sequence Burst

- 1, 2, 4 and 8 for Interleave Burst

• Programmable CAS Latency ; 1, 2, 3 Clocks