HY57V161610E说明书PDF资料原装现货海力士-114ic电子网

首页 >HY57V161610E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
HY57V161610E	文件：181.48 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-10	文件：181.48 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-10I	文件：482.25 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-15	文件：181.48 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-15I	文件：482.25 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-5	文件：181.48 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-55	文件：181.48 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-55I	文件：482.25 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-5I	文件：482.25 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply 文件：482.25 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX
HY57V161610ET-6	文件：181.48 Kbytes Page：13 Pages	2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All 文件：181.48 Kbytes 页数：13 Pages	HYNIX 海力士	HYNIX

详细参数

型号：
HY57V161610E
制造商：
HYNIX
制造商全称：
Hynix Semiconductor
功能描述：
2 Banks x 512K x 16 Bit Synchronous DRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	HY57V161610E	HYNIX	18+	TSOP	85600	保证进口原装可开17%增值税发票	询价
深圳市荣泽信电子科技有限公司	HY57V161610ET-7	Hynix	23+		500	全新原装真实库存,一周	询价
芯有半导体（深圳）有限公司	HY57V161610ET-55	HY	06+	TSOP	1000	全新原装绝对有货	询价
深圳市勤思达科技有限公司	HY57V161610ET-7	HYNIX	1215+	TSOP	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市恒创达实业有限公司	HY57V161610ET-7	HYNIX	17+	TSOP	6200	100%原装正品现货	询价
深圳市联世界科技有限公司	HY57V161610ET-7	HYNIX	24+/25+		2880	原装正品现货库存价优	询价
齐创科技(上海,北京,青岛)有限公司	HY57V161610ETP-8	HYNIX	23+	TSOP	5000	原装正品,假一罚十	询价
深圳市利加科技有限公司	HY57V161610ETP-7		1018+		13	全新原装现货	询价
深圳市福田区绿盛电子商行	HY57V161610ET-7	HY	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市卓越微芯电子有限公司	HY57V161610ETP-7	HYNIX	25+	TSOP50P	339	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多HY57V161610E供应商更新时间2026-2-8 15:14:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号