首页 >HY57V161610E>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16.HY57V161610Eisofferingfullysynchronousoperati | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | |||
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono | HynixHynix Semiconductor SK海力士海力士半导体 |
详细参数
- 型号:
HY57V161610E
- 制造商:
HYNIX
- 制造商全称:
Hynix Semiconductor
- 功能描述:
2 Banks x 512K x 16 Bit Synchronous DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYNIX |
18+ |
TSOP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
原厂原封装 |
18000 |
询价 | ||||
Hynix |
04+ |
500 |
全新原装真实库存,一周 |
询价 | |||
HY |
22+ |
2560 |
绝对原装!现货热卖! |
询价 | |||
HY |
06+ |
TSOP |
1000 |
全新原装 绝对有货 |
询价 | ||
HYNIX |
1215+ |
TSOP |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 | ||
HYNIX |
17+ |
TSOP |
6200 |
100%原装正品现货 |
询价 | ||
HY |
13+ |
TSOP |
100 |
特价热销现货库存 |
询价 | ||
hynix/SKhynix |
2022 |
TSOP50 |
2550 |
原厂原装正品,价格超越代理 |
询价 | ||
HYNIX |
05+ |
2880 |
原装正品现货供应 |
询价 |
相关规格书
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- HY57V161610ET-15
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- HY57V161610ET-55I
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- HY57V281620ALT-PI
- HY57V281620ALT-SI
- HY57V281620AT-10
- HY57V281620AT-7
- HY57V281620AT-H
- HY57V281620AT-K
- HY57V281620AT-P
- HY57V281620AT-S
- HY57V281620BLT
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- HY57V281620ELT-6
- HY57V281620ELT-H
- HY57V281620ELTP-6
- HY57V281620ELTP-H
- HY57V281620ET-5
- HY57V281620ET-7
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- HY57V281620ETP-6DR-C
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相关库存
更多- HY57V161610ET-10I
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- HY57V168010ATC-15
- HY57V168010DTC-10P
- HY57V168010DTC-8
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- HY57V281620A
- HY57V281620ALT-10
- HY57V281620ALT-7
- HY57V281620ALT-H
- HY57V281620ALT-I
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- HY57V281620AT-PI
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- HY57V281620BT
- HY57V281620ELT-5
- HY57V281620ELT-7
- HY57V281620ELTP-5
- HY57V281620ELTP-7
- HY57V281620ET
- HY57V281620ET-6
- HY57V281620ET-H
- HY57V281620ETP-6
- HY57V281620ETP-7
- HY57V281620FTP-HDR-C