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HY57V161610E

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-10

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-10I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-15

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-15I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-5

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-55

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-55I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-5I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-6

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-6I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-7

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-7I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-8

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-8I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ET-I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610ETP-I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16.HY57V161610Eisofferingfullysynchronousoperati

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610D

2Banksx512Kx16BitSynchronousDRAM

DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V161610D-I

2Banksx512Kx16BitSynchronousDRAM

DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

详细参数

  • 型号:

    HY57V161610E

  • 制造商:

    HYNIX

  • 制造商全称:

    Hynix Semiconductor

  • 功能描述:

    2 Banks x 512K x 16 Bit Synchronous DRAM

供应商型号品牌批号封装库存备注价格
HYNIX
18+
TSOP
85600
保证进口原装可开17%增值税发票
询价
23+
原厂原封装
18000
询价
Hynix
04+
500
全新原装真实库存,一周
询价
HY
22+
2560
绝对原装!现货热卖!
询价
HY
06+
TSOP
1000
全新原装 绝对有货
询价
HYNIX
1215+
TSOP
150000
全新原装,绝对正品,公司大量现货供应.
询价
HYNIX
17+
TSOP
6200
100%原装正品现货
询价
HY
13+
TSOP
100
特价热销现货库存
询价
hynix/SKhynix
2022
TSOP50
2550
原厂原装正品,价格超越代理
询价
HYNIX
05+
2880
原装正品现货供应
询价
更多HY57V161610E供应商 更新时间2024-4-28 10:15:00