丝印：HX6；Package：TSOT26；20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For auto

文件：677.23 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：HX6；Package：TSOT26；20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For auto

文件：677.23 Kbytes 页数：10 Pages

DIODES

美台半导体

HX6101NLT 1GPP, 1:1, 4PPOE, 音频变压器

电感 350 uH 数据速率 1000BASE-T 隔离电压 1500 VAC 匝数比 1CT:1CT 端口数 双 最小工作温度 -40°C 最大工作温度 +85°C 频率范围 1 MHz to 100 MHz 安装风格 SMD/SMT 长 27.81 mm 宽 12.19 mm 高 7.24 mm

文件：321.286 Kbytes 页数：10 Pages

PULSE

PDF上传者：深圳市勤思达科技有限公司

Dual 1Gigabit Slimline Magnetic Modules

● Fully RoHS and Halogen Free ● Designed to exceed IEEE802.3au over Industrial temperature range -40 to +85°C ● Up to 35W PoE over 100m of UTP using 4pair connection ● Compatible with all Major PHYs ● 30% PCB saving compared to standard dual port devices

文件：486.13 Kbytes 页数：3 Pages

PULSE

Dual 1Gigabit Slimline Magnetic Modules

● Fully RoHS and Halogen Free ● Designed to exceed IEEE802.3au over Industrial temperature range -40 to +85°C ● Up to 35W PoE over 100m of UTP using 4pair connection ● Compatible with all Major PHYs ● 30% PCB saving compared to standard dual port devices

文件：486.13 Kbytes 页数：3 Pages

PULSE

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

HONEYWELL

霍尼韦尔

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

HONEYWELL

霍尼韦尔

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

HONEYWELL

霍尼韦尔

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

HONEYWELL

霍尼韦尔

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

HONEYWELL

霍尼韦尔