型号：DMC2710UVT-13；Package：TSOT26；20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For auto

文件：677.23 Kbytes 页数：10 Pages

DIODES

美台半导体

型号：DMC2710UVT-7；Package：TSOT26；20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For auto

文件：677.23 Kbytes 页数：10 Pages

DIODES

美台半导体

型号：HX6135HL；Dual 1Gigabit Slimline Magnetic Modules

● Fully RoHS and Halogen Free ● Designed to exceed IEEE802.3au over Industrial temperature range -40 to +85°C ● Up to 35W PoE over 100m of UTP using 4pair connection ● Compatible with all Major PHYs ● 30% PCB saving compared to standard dual port devices

文件：486.13 Kbytes 页数：3 Pages

pulse

型号：HX6136HL；Dual 1Gigabit Slimline Magnetic Modules

● Fully RoHS and Halogen Free ● Designed to exceed IEEE802.3au over Industrial temperature range -40 to +85°C ● Up to 35W PoE over 100m of UTP using 4pair connection ● Compatible with all Major PHYs ● 30% PCB saving compared to standard dual port devices

文件：486.13 Kbytes 页数：3 Pages

pulse

型号：HX6228；128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

Honeywell

霍尼韦尔

型号：HX6228ABFC；128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

Honeywell

霍尼韦尔

型号：HX6228ABFT；128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

Honeywell

霍尼韦尔

型号：HX6228ABHC；128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

Honeywell

霍尼韦尔

型号：HX6228ABHT；128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

Honeywell

霍尼韦尔

型号：HX6228ABNC；128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 页数：12 Pages

Honeywell

霍尼韦尔