IRF510

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

IRF510

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

IRF510

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRF510

iscN-ChannelMosfetTransistor

IRF510

RepetitiveAvalancheRated

IRF510

N-ChannelPowerMosfets

IRF510

SEMICONDUCTORS

IRF510

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

IRF510

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

Features •5.6A,100V •r DS(ON) =0.540 Ω •SinglePulseAvalancheEnergyRated •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMount Componentsto

IRF510A

AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.)