IQMS-133

MEMSOscillatorSpecification

IQS133

IQSwitch-ProxSenseSeries

IRF133

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF133

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF133

HighPower,HighSpeedApplications

IRFF133

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

IRFP133

N-CHANNELPOWERMOSFETS

IRFS133

iscN-ChannelMOSFETTransistor

IRFS133

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

JH-133

QuadratureHybrid,20-40MHz

Features •OctaveBandwidth •3°MaximumPhaseDeviationfrom90° •Lowloss:0.5dBMax. •Impedance:50OhmsNom. •InputPower:5W.Max.@25°C Deratedto1W.@100°C •TypicalPhaseLinearity:3°fromStraightLine •MIL-STD-202ScreeningAvailable