IRFE130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRFE130

SimpleDriveRequirements

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

IRFF130

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

IRFF130

N-ChannelMOSFETinaHermeticallysealedTO39

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

IRFF130

iscN-ChannelMOSFETTransistor

IRFF130

SEMICONDUCTORS

IRFN130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

IRFNJ130N

N?밅HANNELPOWERMOSFET