首页 >HV254FG-G单片机MCU>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Diagonal6mm(Type1/3)CCDImageSensorforNTSCColorVideoCameras Description TheICX254AKisaninterlineCCDsolid-stateimagesensorsuitableforNTSCcolorvideocameraswithadiagonal6mm(Type1/3)system.ComparedwiththecurrentproductICX054BK,basiccharacteristicssuchassensitivity,smear,dynamicrangeandS/Nareimproveddrasticallythrought | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
Diagonal6mm(Type1/3)CCDImageSensorforEIAB/WVideoCameras Description TheICX254ALisaninterlineCCDsolid-stateimagesensorsuitableforEIAB/Wvideocameraswithadiagonal6mm(Type1/3)system.ComparedwiththecurrentproductICX054BL,basiccharacteristicssuchassensitivity,smear,dynamicrangeandS/Nareimproveddrasticallyfromvisible | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
INA254,80V,High-Voltage,짹50AIntegratedPrecisionShunt,Bidirectional,Zero-DriftCurrent-ShuntMonitor | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
INA25480-V,High-Voltage,±75-AIntegratedPrecisionShunt,Bidirectional,Zero-DriftCurrent-ShuntMonitor 1Features •Precisionintegrated400-μΩshuntresistor –Continuous±75Aat25°C –Continuous±50Afrom–40°Cto+85°C –Shuntresistortolerance:0.5(maximum) –Lowdrift:10ppm/°C(0°Cto125°C) –Lowinductance:2nH •Highaccuracy –Systemgainerror:0.5(maximum) –Systemgain | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Corporation | IXYS | ||
NanosecondSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Avalanche-Energy-RatedN-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PulsewidthlimitedbyMaximumJunctionTemperature | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.14ohm,Id=23A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS | IRF International Rectifier | IRF | ||
StandardPowerMOSFET-N-ChannelEnhancementMode StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-mode po | IXYS IXYS Corporation | IXYS |
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