Ultrafast Recovery Modules

Ultrafast Recovery Modules • Ultra Fast Recovery • 200 Amp current rating • 175°C Junction Temperature • ROHS Compliant

文件：117.14 Kbytes 页数：2 Pages

Microsemi

美高森美

Ultrafast recovery Modules

Ultrafast Recovery Modules • Ultra Fast Recovery • 200 Amp current rating • 175°C Junction Temperature • ROHS Compliant

文件：126.49 Kbytes 页数：2 Pages

Microsemi

美高森美

200MHz SAW Filter 13.85MHz Bandwidth

文件：322.53 Kbytes 页数：3 Pages

SIPAT

胜普电子

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

文件：67.52 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

文件：155.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体