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IRF440R

AvalancheEnergyRatedN-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFM440

POWERMOSFETTHRU-HOLE(TO-254AA)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFM440

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN440

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=8.0A)

RDS(on)0.85Ω ID8.0A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN440

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP440

Dynamicdv/dtRating

TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole.Italsoprovidesgreatercreepageoisiancebetweenpinstcme

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFP440

PowerMOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半导体

IRFP440

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP440

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.8A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP440

8.8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRFP440A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP440B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFP440PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP440PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP440R

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS440

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS440A

iscSiliconNPNPowerTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS440A

AdvancedPowreMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=500V ♦LowerRDS(ON):0.638Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS440B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFY440

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

详细参数

  • 型号:

    HTRM440/AIE

  • 功能描述:

    RFID HITAG PROX MODULE RS232

  • RoHS:

  • 类别:

    RF/IF 和 RFID >> RFID 读取模块

  • 系列:

    HITAG® 近程

  • 产品目录绘图:

    DLP-RFID-UHF1B

  • 标准包装:

    1

  • 系列:

    - RF

  • 型:

    读/写

  • 频率:

    900MHz

  • 特点:

    ISO 18000-6 a/b/c

  • 封装/外壳:

    模块

  • 供应商设备封装:

    模块

  • 包装:

    散装

  • 产品目录页面:

    635(CN2011-ZH PDF)

  • 其它名称:

    813-1029

供应商型号品牌批号封装库存备注价格
NXP
20+
射频元件
3000
就找我吧!--邀您体验愉快问购元件!
询价
NXP
22+
NA
45000
加我QQ或微信咨询更多详细信息,
询价
PHILIPS
05+
原厂原装
4272
只做全新原装真实现货供应
询价
PHILIPS
23+
65480
询价
VISHAY-威世
24+25+/26+27+
固定值电阻
2658
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
VISHAY(威世)
23+
SOP8
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
HenryTech(恒利泰)
23+
6000
诚信服务,绝对原装原盘
询价
23+
N/A
96000
一级代理放心采购
询价
LEM
25453+
con
17
现货常备产品原装可到京北通宇商城查价格
询价
AD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
更多HTRM440/AIE供应商 更新时间2021-9-14 10:50:00