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IRF320

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF320LSPBF

HEXFET짰PowerMOSFET

VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE

IRF

International Rectifier

IRFD320

0.5A,400V,1.800Ohm,N-ChannelPowerMOSFET

Description ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

Intersil

Intersil Corporation

IRFD320

PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=0.49A)

VDSS=400V RDS(on)=1.8Ω ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD320

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.

VishayVishay Siliconix

威世科技威世科技半导体

IRFD320

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半导体

IRFD320PBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=0.49A)

VDSS=400V RDS(on)=1.8Ω ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD320PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.

VishayVishay Siliconix

威世科技威世科技半导体

IRFE320

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE320

SimpleDriveRequirements

IRF

International Rectifier

产品属性

  • 产品编号:

    HSMR-C320

  • 制造商:

    Broadcom Limited

  • 类别:

    光电器件 > LED 指示 - 分立

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 颜色:

    蓝色

  • 配置:

    标准

  • 毫烛光等级:

    653mcd

  • 透镜样式:

    圆形,带圆顶

  • 透镜尺寸:

    0.70mm 直径

  • 电压 - 正向 (Vf)(典型值):

    3V

  • 电流 - 测试:

    20mA

  • 视角:

    50°

  • 安装类型:

    表面贴装型

  • 波长 - 主:

    473nm

  • 波长 - 峰值:

    469nm

  • 封装/外壳:

    0603(1608 公制)

  • 供应商器件封装:

    0603

  • 大小 / 尺寸:

    1.60mm 长 x 0.80mm 宽

  • 高度(最大值):

    1.08mm

  • 描述:

    CHIP,TOP MT,INGAN, BLUE

供应商型号品牌批号封装库存备注价格
BROADCOM/AVAGO
21+
SMDSMT
880000
明嘉莱只做原装正品现货
询价
Broadcom Limited
17+18+22+
0603(1608 公制)
25480
原装+实力库存+当天发货
询价
Broadcom Limited
24+
0603(1608 公制)
6000
只做原装,欢迎询价,量大价优
询价
24+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
询价
AVAGO/安华高
24+
SMDLED
36000
只做全新原装进口现货
询价
AVAGO
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
询价
AVAGO/安华高
23+
SMD0603
50000
全新原装正品现货,支持订货
询价
AVAGO
ROHS
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
Avago
2023+环保现货
SMD
480000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
AVAGO/安华高
24+
NA/
8000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多HSMR-C320供应商 更新时间2025-7-22 17:00:00