IR140CSP

Flipky

IRF140

N-CHANNELPOWERMOSFETS

N-CHANNELPOWERMOSFETS

IRF140

N-CHANNELPOWERMOSFET

IRF140

N-ChannelPowerMOSFETs,27A,60-100V

IRF140

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.077ohm,Id=28A)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF140

28A,100V,0.077Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRF140

RepetitiveAvalancheRatings

IRF140

N-ChannelPowerMOSFETs,27A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF140

HighPower,HighSpeedApplications

DESCRIPTION •DrainCurrentID=27A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.085Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies

IRF140SMD

N-CHANNELPOWERMOSFET