Silicon Schottky Barrier Diode

Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.

文件：23.51 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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Silicon Schottky Barrier Diode for High Speed Switching

Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.

文件：64.7 Kbytes 页数：5 Pages

RENESAS

瑞萨

Diodes>Switching

Renesas

瑞萨

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

文件：17.41 Kbytes 页数：2 Pages

NTE

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：158.25 Kbytes 页数：6 Pages

POINN

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：158.25 Kbytes 页数：6 Pages

POINN