Silicon Epitaxial Planar Diode for High Speed Switching

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Diodes>Switching

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Silicon Epitaxial Planar Diode for High Speed Switching

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SOT-23 Plastic-Encapsulated Diodes

[TEL] SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: 300 m A Reverse Voltage VR: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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Plastic-Encapsulated Diodes

SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: 300 m A Reverse Voltage VR: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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