Silicon Epitaxial Planar Diode for High Speed Switching

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RENESAS

瑞萨

Diodes>Switching

Renesas

瑞萨

SOT-23 Plastic-Encapsulated Diodes

[TEL] SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: 300 m A Reverse Voltage VR: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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Plastic-Encapsulated Diodes

SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: 300 m A Reverse Voltage VR: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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TEL

东电电子

SMALL-SIGNAL DIODE

DESCRIPTION MC2836 is a super mini package plastic seal type silicon epitaxial type double diode, especially designed for high speed switching application. Due to the small pin capacitance, short switching time (reverse recovery time), It is most suitable for high speed switching application and

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ISAHAYA

谏早电子