PNP EPITAXIAL PLANAR TRANSISTOR

Description The HSB564A is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................... -55 ~ +150 °C Junction Temperature ...............

文件：35.76 Kbytes 页数：3 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description\nThe HSB564A is designed for general purpose low frequency power amplifier applications.Absolute Maximum Ratings\n• Maximum Temperatures\n  Storage Temperature........................................................... -55 ~ +150 °C\n  Junction Temperature ...............................

HSMC

华昕

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density.

文件：49.87 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density.

文件：50.03 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：146.93 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体