丝印：HQN；Package：DSBGA；LOW-POWER DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.2 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：832.37 Kbytes 页数：29 Pages

TI

德州仪器

丝印：HQN；Package：DSBGA(YFP)；LOW-POWER DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.2 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：832.75 Kbytes 页数：29 Pages

TI

德州仪器

丝印：HQN；Package：DSBGA(YFP)；LOW-POWER DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.2 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：832.75 Kbytes 页数：29 Pages

TI

德州仪器

丝印：HQN；Package：DSBGA；LOW-POWER DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.2 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：832.37 Kbytes 页数：29 Pages

TI

德州仪器

Quadruple High Voltage NPN Epitaxial Planar Transistor

Quadruple High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. • Complementary to HQP1498QF • Pb-free package

文件：274.69 Kbytes 页数：6 Pages

CYSTEKEC

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