气压/高度传感器

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HOPERF

华普微

PRECISION BAROMETER AND ALTIMETER SENSOR

文件：502.89 Kbytes 页数：12 Pages

HOPE

华普微

Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：99.63 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：201.98 Kbytes 页数：9 Pages

IRF

Spatial Distribution

文件：45.08 Kbytes 页数：1 Pages

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