TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process)

Audio Frequency General Purpose Amplifier Applications Q1 • High voltage : VCEO = −50V • High current : IC = −150mA (max) • High hFE : hFE = 120∼400 • Excellent hFE linearity : hFE (IC = −0.1mA) / (IC = −2mA) = 0.95 (typ.) Q2 • High voltage : VCEO = 60V • High current : IC = 150mA (max) •

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TOSHIBA

东芝

Transistor for low frequency small-signal amplification 2 in 1

Application Scope：General-purpose\nPolarity：PNP + NPN\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC -0.15 A \nCollector Current (Q2) IC 0.15 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Toshiba

东芝

3B Series 8 Channel Backplane

PRODUCT OVERVIEW To address diverse applications, the 3B Subsystem Series includes a family of backplanes which provide a complete signal conditioning solution. The 3B02 is designed for 8 channels to offer users the flexibility to match the size of a system to specific applications. All backplane

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亚德诺

7.5 WATT WIDE INPUT DC-DC CONVERTERS

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