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FCP11N60-G	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60N	文件：922.38 Kbytes Page：10 Pages	N-ChannelMOSFET600V,10.8A,0.299廓 Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP11N60N	文件：301.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCPF11N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60	文件：620.41 Kbytes Page：17 Pages	PFCPWMCombinationController Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60	文件：682.46 Kbytes Page：15 Pages	PowerFactorCorrectionConverterDesign	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60	文件：810.42 Kbytes Page：10 Pages	SuperFET GeneralDescription SuperFET™isanewgenerationofhighvoltageMOSFETsfromFairchildwithoutstandinglowon-resistanceandlowgatechargeperformance,aresultofproprietarytechnologyutilizingadvancedchargebalancemechanisms.Thisadvancedtechnologyhasbeentailoredtominimizecond	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60F	文件：836.71 Kbytes Page：10 Pages	600VN-ChannelMOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60F	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60F	文件：335.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCPF11N60-G	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60NT	文件：293.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCPF11N60NT	文件：922.38 Kbytes Page：10 Pages	N-ChannelMOSFET600V,10.8A,0.299廓 Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60T	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF11N60T	文件：574.49 Kbytes Page：11 Pages	GeneralDescription GeneralDescription SuperFET™is,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowonresistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionlos	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FMC11N60E	文件：333.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FMC11N60E	文件：626.98 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMI11N60E	文件：631.65 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP11N60E	文件：623.42 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMV11N60E	文件：553.4 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市惊羽科技有限公司	HMS11N65	HMSEMI	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市九方航科技有限公司	HMS11N65	VBSEMI	19+	TO-220	29600	绝对原装现货,价格优势!	询价
贸泽芯城（深圳）电子科技有限公司	HMS11N65D	HM	21+ROHS	TO263	28888	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市骏创达科技有限公司	HMS1201S003	TE/泰科	2308+		221453	一级代理,原装正品,公司现货!	询价
深圳市恒意法电子有限公司	HMS1201S003	TE Connectivity Aerospace, Def	21+	RELAY GEN PURPOS 6PDT 2A 26.5V	6000	继电器原装渠道正品现货	询价
深圳市鹏顺微电子科技有限公司	HMS1201S004	TE Connectivity	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市德力诚信科技有限公司	HMS1201S006	TE	23+	NA	100	现货!就到京北通宇商城	询价
深圳市百视威讯电子科技有限公司	HMS1201S110M	一级代理	23+	N/A	78300	一级代理放心采购	询价
深圳市高捷芯城科技有限公司	HMS1201S111M	TE Connectivity(美国泰科)	23+	插件	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市芯睿晨电子有限公司	HMS1201S111M	TE Connectivity Aerospace, Def	23+	原厂封装	436	现货常备产品原装	询价

更多HMS11N60K供应商更新时间2024-5-27 16:16:00

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