HMG50N65T

650V /50A Trench Field Stop IGBT

BIDW50N65T

BIDW50N65TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns®ModelBIDW50N65TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

FGW50N65WE

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=50A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SolarConverters ·UninterruptedPowerSupply ·UPS,PFC ·WeldingConverters

IGB50N65

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.7V@IC=50A ·HighSpeedSmoothSwitchingDeviceForHard &SoftSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

MIW50N65F

TrenchandFieldStopIGBT650V50A

Features •HighSpeedSmoothSwitchingDeviceforHardandSoftSwitching •Vce(sat)withPositiveTemperatureCoefficient •HighRuggedness,GoodThermalStability •VeryTightParameterDistribution •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •Lead

MIW50N65F-BP

TrenchandFieldStopIGBT650V50A

Features •HighSpeedSmoothSwitchingDeviceforHardandSoftSwitching •Vce(sat)withPositiveTemperatureCoefficient •HighRuggedness,GoodThermalStability •VeryTightParameterDistribution •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •Lead

MPBW50N65EH

EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVCEsat

Features Easyparallelswitchingcapabilitydueto positivetemperaturecoefficientinVCEsat LowVCEsat，fastswitching Highruggedness,goodthermalstability Verytightparameterdistribution TrenchandFieldStopIGBT Applications UPS PFC

RLPGB50N65CT

N-ChannelIGBT

APPLICATIONS Generalpurposeinverters UPS MotorControl FEATURES Lowgatecharge TrenchFSTechnology, RoHSproduct