HMG20N60A规格书应用电路库存现货HMSEMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HMG20N60A	文件：633.94 Kbytes Page：5 Pages	丝印：HMG20N60A；Package：TO-3P；20A, 600V insulated gate bipolar transistor 文件：633.94 Kbytes 页数：5 Pages	HMSEMI 华之美半导体	HMSEMI
HMG20N60A	文件：300 bytes Page：1 Pages	IGBT	HMsemi 华之美半导体	HMsemi
IKB20N60T	文件：435.11 Kbytes Page：15 Pages	IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power S 文件：435.11 Kbytes 页数：15 Pages	INFINEON 英飞凌	INFINEON
IKB20N60T	文件：703.05 Kbytes Page：13 Pages	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件：703.05 Kbytes 页数：13 Pages	INFINEON 英飞凌	INFINEON
IKB20N60TA	文件：2.48742 Mbytes Page：16 Pages	600V low loss switching series third generation 文件：2.48742 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON

更多HMG20N60A供应商更新时间2026-1-31 10:20:00