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IRFB260N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB260NPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFB260NPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFI260

TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*)

200Volt,0.060Ω,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan

IRF

International Rectifier

IRFI260

SimpleDriveRequirements

IRF

International Rectifier

IRFM260

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.060ohm,Id=35A*)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETs

IRF

International Rectifier

IRFM260

SimpleDriveRequirements

IRF

International Rectifier

IRFP260

PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260

StandardPowerMOSFET-N-ChannelEnhancementMode

Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes

IXYS

IXYS Corporation

IRFP260

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半导体

产品属性

  • 产品编号:

    HMC260A-SX

  • 制造商:

    Analog Devices Inc.

  • 类别:

    RF/IF,射频/中频和 RFID > 射频混频器

  • 包装:

    托盘

  • 射频类型:

    雷达

  • 频率:

    10GHz ~ 26GHz

  • 噪声系数:

    11.5dB

  • 辅助属性:

    升/降频器

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    模具

  • 供应商器件封装:

    模具

  • 描述:

    GAAS MMIC FUNDAMENTAL MIXER

供应商型号品牌批号封装库存备注价格
ADI/亚德诺
23+
CHIPSORDIE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ADI
24+
CHIPS OR DIE
3660
十年信誉,只做全新原装正品现货,以优势说话 !!
询价
ADI/亚德诺
25+
20000
原装现货,可追溯原厂渠道
询价
ADI/亚德诺
22+
66900
原封装
询价
ADI/亚德诺
23+
GEL_PACK
3000
只做原装正品,假一赔十
询价
ADI
24+
CHIPS OR DIE
3600
原盘,原标,假一赔三,支持账期
询价
ANALOG DEVICES INC
24+
con
10000
查现货到京北通宇商城
询价
ANALOG DEVICES INC
24+
con
2500
优势库存,原装正品
询价
ADI/亚德诺
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
ADI/亚德诺
2511
原封装
66900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
更多HMC260A-SX供应商 更新时间2025-7-29 16:35:00