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HV9110PJ

High-VoltageCurrent-ModePWMController

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

HV9110X

High-VoltageCurrent-ModePWMController

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFD9110

1-WATTRATEDPOWERMOSFETs

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs

Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features •-0.6Aand-07A,-80Vand-100V •rDS(ON)=

HARRIS

Harris Corporation

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A)

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半导体

IRFD9110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFD9110

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •P-channel •Fastswitching •175°Coperatingtemperature •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    HM9110C

  • 功能描述:

    TONE/PULSE SWITCHABLE 10 MEMORY DIALER

供应商型号品牌批号封装库存备注价格
24+
DIP
450
询价
HMC
89+
DIP
450
现货
询价
HIT
23+
SOP
5000
原装正品,假一罚十
询价
HMC
24+
原厂封装
450
原装现货假一罚十
询价
NS
23+
SOP-8
6500
全新原装假一赔十
询价
HMC
24+
DIP-18
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
HMC
23+
QFP
3200
全新原装、诚信经营、公司现货销售
询价
HIT
9336+
DIP-18P
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
HMC
23+
DIP-18
8560
受权代理!全新原装现货特价热卖!
询价
HMC
2023+
DIP18
50000
原装现货
询价
更多HM9110C供应商 更新时间2025-5-1 10:20:00