丝印：HM70N15；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：524.34 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

文件：55.77 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low d

文件：37.72 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

文件：55.77 Kbytes 页数：2 Pages

IXYS

艾赛斯