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HM70N15

Marking:HM70N15;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

70N15

HiPerFETTMPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fast

IXYS

IXYS Corporation

FQA70N15

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA70N15

N-ChannelPowerMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF70N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQAF70N15

N-ChannelPowerMOSFET

Features •44A,150V,RDS(on)=0.028Ω@VGS=10V •Lowgatecharge(typical135nC) •LowCrss(typical135pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFH70N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH70N15

HiPerFETTMPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fast

IXYS

IXYS Corporation

IXFR70N15

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowd

IXYS

IXYS Corporation

IXFT70N15

HiPerFETTMPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fast

IXYS

IXYS Corporation

供应商型号品牌批号封装库存备注价格
HMSEMI
23+
TO-220
50000
全新原装正品现货,支持订货
询价
H
TO-220
22+
6000
十年配单,只做原装
询价
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
H
23+
TO-220
6000
原装正品,支持实单
询价
HMSEMI
24+
NA/
53250
原装现货,当天可交货,原型号开票
询价
HMSEMI
23+
TO-220
6800
专注配单,只做原装进口现货
询价
HMSEMI
20+
TO-220
300000
现货很近!原厂很远!只做原装
询价
H
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
HMSEMI
24+
TO-220
60000
全新原装现货
询价
更多HM70N15供应商 更新时间2025-5-3 11:00:00