4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

文件：509.91 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

文件：509.91 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

文件：509.91 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

文件：509.91 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司