256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

文件：114.25 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

文件：114.25 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

文件：114.25 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

文件：114.25 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

文件：114.25 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司